光学与光电技术, 2019, 17 (3): 60, 网络出版: 2019-07-20  

量子线材料折射率变化偏振相关性研究

Study of Polarization Dependence of Refractive Index Change of Quantum Wire
作者单位
武汉大学电子信息学院, 湖北 武汉 430072
摘要
有源区载流子浓度变化导引的折射率变化是许多新型光通信器件的工作机理, 对量子线材料折射率变化偏振相关性的研究有利于改善器件的性能。首先分析了线区材料组分、垒区材料组分、柱状量子线直径和载流子浓度对量子线材料TE模和TM模折射率变化的影响。以此为基础, 提出了一种实现量子线材料折射率变化低偏振相关的多参数调配方法, 并设计出C波段(1 530~1 565 nm)内折射率变化低偏振相关(<1%)的InGaAs/InGaAsP量子线材料, 表明该多参数调配方法对量子线材料折射率变化低偏振相关的设计具有指导作用。
Abstract
The refractive index change induced by carrier concentration change in active region is the operating mechanism of many new optical communication devices. The study of polarization dependence of refractive index change of quantum wire material is helpful to improve the performance of these devices. Firstly, the influences of wire material component, barrier material component, columnar wire diameter and carrier density on the refractive index changes of TE mode and TM mode of quantum wire are studied. On this basis, a multi-parameter adjustment method is proposed to realize low polarization dependence of refractive index change. The quantum wire material with low polarization dependence (<1%) of refractive index change within C-band (1 530~1 565 nm) is designed. It is shown that the multi-parameter adjustment method can be used to guide the design of low polarization dependence of refractive index change of quantum wire material.

周熠, 缪庆元, 何平安, 王宝龙. 量子线材料折射率变化偏振相关性研究[J]. 光学与光电技术, 2019, 17(3): 60. ZHOU Yi, MIAO Qing-yuan, HE Ping-an, WANG Bao-long. Study of Polarization Dependence of Refractive Index Change of Quantum Wire[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2019, 17(3): 60.

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