发光学报, 2019, 40 (9): 1108, 网络出版: 2019-09-27  

InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响

High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer
作者单位
南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330096
摘要
基于含有V坑结构的Si(111)衬底InGaN/GaN绿光LED, 我们在传统p-AlGaN电子阻挡层之后优化生长一层25 nm的低掺镁p-AlGaN插入层, 并获得明显的效率提升。在35 A/cm2的电流密度下, 主波长为520 nm的LED外量子效率和光功率分别达到43.6%和362.3 mW, 这是截至目前报道的最高记录。通过分析表明, 其潜在的物理机制归结于p-AlGaN插入层能够提高空穴从V坑注入的效率。本文提供了一种有效提升发光效率的方法, 尤其适合于含有V坑结构的InGaN/GaN LED。
Abstract
Significantly improved external quantum efficiency was achieved by growing an additional optimized 25 nm low-doped p-AlGaN interlayer(IL) after the conventional p-AlGaN electron blocking layer for InGaN/GaN green LEDs with V-pits on Si(111) substrate. At 35 A/cm2 current density, external quantum efficiency(EQE) and output power reach up to 43.6% and 362.3 mW with the dominant wavelength of 520 nm. This is a new record for green InGaN-based LEDs. The underlying physical mechanism is attributed to the enhanced holes injection efficiency via V-shaped pits assisted by the optimized p-AlGaN interlayer. This paper provides an effective approach to improve efficiency especially suitable for those InGaN/GaN LED with V-shape pits.

余浩, 郑畅达, 丁杰, 莫春兰, 潘拴, 刘军林, 江风益. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019, 40(9): 1108. YU Hao, ZHENG Chang-da, DING Jie, MO Chun-lan, PAN Shuan, LIU Jun-lin, JIANG Feng-yi. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019, 40(9): 1108.

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