发光学报, 2019, 40 (9): 1115, 网络出版: 2019-09-27
高注量1 MeV电子辐照下InGaAs单结太阳电池退化规律与机制
Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron
InGaAs单结太阳电池 高注量电子 位移损伤 载流子寿命 载流子去除效应 InGaAs single junction solar cell high fluence electron displacement damage carrier lifetime carrier removal effect
摘要
为研究键合四结太阳电池中In0.53Ga0.47As子电池在高注量电子辐照下的性能退化规律与机制, 对In0.53Ga0.47As单结太阳电池进行了高注量1 MeV电子辐照试验, 并结合等效位移损伤剂量理论和数值拟合方法对电池性能的退化进行了分析讨论。结果表明, 在1 MeV电子辐照下, 非电离能损(NIEL)值在电池活性区内随着电子入射深度的增加不断增大; 开路电压Voc、短路电流Isc等重要I-V特性参数随着辐照注量的增加均发生了不同程度的退化, 注量达到6×1016 e/cm2时, 电池光电转化效率为零, 电池失效。光谱响应方面, 注量小于4×1016 e/cm2时, 长波区域退化程度明显比短波区域严重; 注量大于4×1016 e/cm2时, 长波区域退化程度与短波区域基本相同。辐照位移损伤引起的光生少数载流子扩散长度减小和载流子去除效应是导致电池性能退化的主要原因。
Abstract
In this paper, the radiation effects of In0.53Ga0.47As solar cell grown by MBE method irradiated by 1 MeV electron with high fluence irradiation have been studied. The degradation properties of cell parameters have been analyzed by Mulassis simulation result and the method of I-V curve mathematically fitting. The results show that the value of Non-ionizing energy loss (NIEL) increases with the increase of electron incident depth in the active region of solar cell under electron irradiation. The electrical parameters of In0.53Ga0.47As solar cell, Voc, Isc, Pmax and FF, degraded in different scale with the increase of fluence. When the fluence reaches 6×1016 e/cm2, the photoelectric conversion efficiency of the solar cell is zero, and the performance of the cell is invalid. For spectral response, when the fluence is less than 4×1016 e/cm2, the degradation of long-wave region is more serious than that of short-wave region. When the fluence is greater than 4×1016 e/cm2, the degree of degradation of the long-wave region is substantially the same as that of the short-wave region. The decrease of minority carrier diffusion length and carrier removal effect caused by displacement damage are the main reasons for degradation of solar cell performance.
慎小宝, 李豫东, 玛丽娅·黑尼, 赵晓凡, 莫敏·赛来, 许焱, 雷琪琪, 艾尔肯·阿不都瓦衣提, 郭旗, 陆书龙. 高注量1 MeV电子辐照下InGaAs单结太阳电池退化规律与机制[J]. 发光学报, 2019, 40(9): 1115. SHEN Xiao-bao, LI Yu-dong, Maliya HEINI, ZHAO Xiao-fan, Momin SAILAI, XU Yan, LEI Qi-qi, Aierken ABUDUWAYITI, GUO Qi, LU Shu-long. Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron[J]. Chinese Journal of Luminescence, 2019, 40(9): 1115.