发光学报, 2019, 40 (9): 1130, 网络出版: 2019-09-27   

全息光刻制备808 nm腔面光栅半导体激光器

808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography
作者单位
1 长春理工大学 理学院, 吉林 长春 130022
2 吉林农业大学 信息技术学院, 吉林 长春 130018
摘要
利用全息光刻开展了808 nm腔面光栅半导体激光器腔面膜系制备, 制备与表征了单管芯器件, 单管芯器件条宽100 μm, 腔长2 mm, 输出中心波长807.32 nm, 光谱半宽为0.36 nm, 15~45 ℃温度范围内波长随温度的漂移系数为0.072 nm/℃, 室温单管芯最大连续输出功率达到2.8 W, 阈值电流为0.49 A, 斜率效率为1.05 W/A。测试结果表明808 nm腔面光栅半导体激光器实现了单纵模输出。
Abstract
The laser holography photolithography technology was designed, the optical path of holography lithography system was calculated and built based on the designed parameters of cavity grating, and the holography lithography conditions were optimized to fabricate the mask patterns of cavity grating. Based on the design of facet coating films, the facet coating process was investigated by precisely controlling the thickness and uniformity of films to realize the transmissivity, reflectivity, and bandwidth satisfied with the single longitudinal mode output of 808 nm facet grating LD. The single chip device of 808 nm facet grating LD was fabricated and characterized, with width of 100 μm and length of 2 mm. High performance was achieved with central wavelength of 807.32 nm, FWHM of 0.36 nm, wavelength drift coefficient with temperature variation(15~45 ℃) of 0.072 nm/℃, maximum output power of 2.8 W, threshold of 0.49 A, and slop efficient of 1.05 W/A.

王岳, 王勇, 李占国, 尤明慧. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019, 40(9): 1130. WANG Yue, WANG Yong, LI Zhan-guo, YOU Ming-hui. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019, 40(9): 1130.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!