红外与毫米波学报, 2019, 38 (4): 04395, 网络出版: 2019-10-14
Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN
Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN
摘要
Abstract
This paper presents the simulation results of DC, small-signal and noise properties of GaP based Double Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP, GaAs, Si and GaN (wurtzite, wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage (VB) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4.9×109 W/m2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN(wz) displays large values of break down voltage, efficiency and power density as compared to Si, GaAs and GaP IMPATTs.
, , , . Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN[J]. 红外与毫米波学报, 2019, 38(4): 04395. Janmejaya Pradhan, S K, S R, G N. Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04395.
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