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GaSb衬底外延InAs薄膜及光学性质研究

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

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摘要

利用分子束外延技术在GaSb(100)衬底上先生长作为缓冲层以降低薄膜失配度的低Sb组分的三元合金InAsSb,再生长InAs薄膜.在整个生长过程中通过反射高能电子衍射仪进行实时原位监测.InAs薄膜生长过程中,电子衍射图案显示了清晰的再构线,其薄膜表面具有原子级平整度.利用原子力显微镜对InAs薄膜进行表征,结果显示较低Sb组分的InAsSb缓冲层上外延InAs薄膜的粗糙度比较高Sb组分的InAsSb缓冲层上外延InAs薄膜的粗糙度降低了约2.5倍.通过对不同Sb组分的三元合金InAsSb缓冲层上外延的InAs薄膜进行X射线衍射测试及对应的模拟,结果表明在较低Sb组分的InAsSb缓冲层上外延InAs薄膜的衍射峰半高峰宽较小,说明低Sb组分的InAsSb作为缓冲层可以降低InAs薄膜的内应力,提高InAs薄膜的结晶质量.利用光致发光光谱对高结晶质量的InAs薄膜进行发光特性研究,10 K下InAs的发光峰位约为0.418 eV,为自由激子发光.

Abstract

The ternary alloy InAsSb of the low Sb component as the buffer layer, which reduces the mismatch of the film, was grown on the GaSb (100) substrate by using the molecular beam epitaxy , and then regrown the InAs film. Real-time in situ monitoring by reflection high energy electron diffraction throughout the growth process. Following the growth of the InAs film, the electron diffraction pattern showed a clear reconstitution line, with the surface of the film having atomic flatness. Atomic Force Microscopy is used to characterize InAs films, and the results show that the roughness of epitaxial InAs film on the InAsSb buffer with lower Sb components is reduced by about 2.5 times than the roughness of epitaxial InAs film on the InAsSb buffer with higher Sb components. X-ray diffraction and simulation were performed for epitaxial InAs films on ternary alloy InAsSb buffer with different Sb composition. The results show that the full width half maximun of the diffraction peak of the epitaxial InAs film on the lower Sb composition of InAsSb buffer layer is smaller. It is indicated that the InAsSb with a low Sb component acting as a buffer layer can reduce the internal stress of the InAs film and can improve the crystal quality of the InAs film. The luminescence properties of InAs films with high crystal quality were studied by photoluminescence spectroscopy. The luminescence peak of InAs is about 0.418 eV at 10 K, which is free exciton luminescence.

Newport宣传-MKS新实验室计划
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中图分类号:O484

DOI:10.3788/gzxb20194810.1031002

基金项目:国家自然科学基金(Nos.61704011,61674021,11674038),高功率半导体激光器国家重点实验室基金,吉林省科技发展项目(Nos.20160519007JH,20160520117JH,20160101255JC,20170520118JH)

收稿日期:2019-05-24

修改稿日期:2019-07-23

网络出版日期:--

作者单位    点击查看

张健:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
唐吉龙:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
亢玉彬:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
方铉:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
房丹:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
王登魁:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
林逢源:长春理工大学 高功率半导体激光国家重点实验室,长春 130022
魏志鹏:长春理工大学 高功率半导体激光国家重点实验室,长春 130022

联系人作者:张健(zhang15764339456@163.com)

备注:张健(1995-),男,硕士研究生,主要研究方向为III-V族半导体材料外延生长及表征.

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引用该论文

ZHANG Jian,TANG Ji-long,KANG Yu-bin,FANG Xuan,FANG Dan,WANG Deng-kui,LIN Feng-yuan,WEI Zhi-peng. Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties[J]. ACTA PHOTONICA SINICA, 2019, 48(10): 1031002

张健,唐吉龙,亢玉彬,方铉,房丹,王登魁,林逢源,魏志鹏. GaSb衬底外延InAs薄膜及光学性质研究[J]. 光子学报, 2019, 48(10): 1031002

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