在该研究中,通过激光全息和湿法腐蚀的方法在 InAs/GaAs量子点材料上制备光子晶体,研究了由激光二极管激发制备了光子晶体的 InAs / GaAs量子点材料的光致发光光谱.发现具有光子晶体的量子点材料的光谱显示出多峰结构,光子晶体对短波长部分的发光增强和调制比对长波长部分的增强和调制更明显.InAs / GaAs量子点的光致发光光谱通过刻蚀形成的光子晶体结构得到了调控,并且量子点的激发态发光得到了明显增强.

In this study,the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crys. tals were investigated by laser diode excitation. The photonic crystals were fabricated in the material of InAs/ GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence fromInAs/GaAs quantum dots was modified by photonic crystals,and the emission from excited states was significant. ly enhanced.