采用实验测试和理论分析的方法研究了幅相控制芯片的大功率微波非线性效应。该芯片应用于 Ka波段相控阵雷达收发组件中。测试平台利用固态源和脉冲磁控管来产生 Ka波段大功率微波。随着输入功率幅值的提高,在实验中很明显地观测到了芯片的降级和毁伤现象。通过一系列的实验测试得到了芯片的全态相移特性和降级阈值,并通过图片给出了实验结果。最后,通过理论分析给出了该芯片的毁伤机理。

Large power microwave nonlinear effects on amplitude-phase controller chip were experimentally test. ed and theoretical analyzed. This chip had the typical application on Ka-band phased array radar(PAR)transmit/receive(T/R)modules. The test platform was built up by a solid source and a pulsed magnetron to generate large power Ka-band microwave. The degradation and destroy phenomenon were observed distinctly as the input power amplitudes were improved. The total-state phase characteristics and the degradation thresholds of the selected chiped are obtained through a series of experimental tests. At last,the results are given by figures and the damage mecha. nism is theoretically analyzed.of China(61571078,61801088,11505043)and the National Key R&D Program of China(2017YFE0300200,2017YFE0300201).