针对 InAs纳米线表面氧化造成的发光效率低的问题,采用十八硫醇和硫化铵钝化了由化学气相沉积设备生长的闪锌矿结构的 InAs纳米线。对硫化物钝化前后的 InAs纳米线进行温度依赖的光致发光光谱测试。实验结果表明,十八硫醇和硫化铵钝化的 InAs纳米线在 25 K温度下的发光效率与未钝化的 InAs纳米线相比分别提高了 ~6倍和 ~7倍,此外,可以在室温下探测到硫化铵钝化的 InAs纳米线的光致发光,这为未来基于 InAs纳米线的中红外纳米光子器件提供了可能性。

To solve the problem oflow luminescence efficiency causedby the surface oxidation ofInAs nanowires,C18H38S and(NH4)2S were adopted to passivate zinc blende(ZB)InAs nanowires synthe-sizedby chemical vapor deposition(CVD). Photoluminescence(PL)spectra of(before and after sul-fide passivation)InAs nanowires were performed. The experimental results show that the PLemission efficiency of C18H38S and(NH4)2S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivatedInAs nanowires at 25K,respectively. In addition,the PL of (NH4)2S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanow-iresbasedmiddleinfrarednanophotondevices.