由于具有较大的光学吸收系数与低廉的材料成本, 硫化亚锡(SnS)在新型薄膜太阳能电池中展现出巨大的应用前景。为了实现SnS薄膜的可控制备, 进而研究其光伏特性, 首先, 利用脉冲电沉积法在不同工艺条件下制备了一系列SnS薄膜; 然后, 通过X射线衍射(XRD)技术与扫描电子显微镜(SEM)对薄膜的晶体结构与表面形貌进行表征, 结合紫外-可见-近红外吸收光谱测试结果, 研究两种不同开启脉冲电压对SnS薄膜禁带宽度的影响。同时, 采用莫特-肖特基方程定量计算了SnS薄膜的导电类型与掺杂浓度。在此基础上, 设计了基于Au/SnS/CdS/ITO异质结的原型光伏器件。在AM1.5标准太阳光照射下, 原型器件开路电压为111 mV, 短路电流密度为20.81 μA/cm2。为未来低成本、高性能的薄膜太阳能电池吸收层材料研究提供了理论基础和实验依据。

Due to the large optical absorption coefficient and low raw material cost, tin(Ⅱ) sulfide (SnS) has shown tremendous application foreground for the novel thin film solar cells. In order to achieve the controllable preparation and then investigate the photovoltaic property of SnS thin films, under different process parameters, we fabricate a series of SnS thin films with the pulse electro-deposition method. Then, the crystal structure and surface morphology of SnS thin film are investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM). And the relationship between the two different turn-on pulse potentials and optical band-gaps is explored by UV-Vis-NIR absorptance spectra. Meanwhile, both the conductivity type and doping concentration are evaluated by Mott-Schottky equation. On the basis of the content above, the Au/SnS/CdS/ITO heterojunction-based photovoltaic prototype device is designed and demonstrates the open circuit voltage of 111 mV and short circuiting current density of 20.81 μA/cm2, which will provide theoretic and experimental basis for further research of low-cost and high-performance absorbing layer of thin film solar cells.