发光学报, 2019, 40 (11): 1409, 网络出版: 2019-11-28
InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器
Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors
半导体 范德瓦尔斯异质结 光电探测器 多层结构 semiconductors van der Waals heterojunction photodetector multilayer structure
摘要
为了实现紫外-可见波段的高响应度/低成本的广光谱光电探测,我们制备了基于一维p型Se微米线与二维n型InSe纳米片的混维范德瓦尔斯异质结广光谱探测器。得益于Se微米线与二维层状结构InSe纳米片的高结晶质量, 该器件在紫外-可见光广光谱范围都具有非常高的响应度, 该器件的响应截止边为700 nm。 值得指出的是, 该器件在-5 V的偏压下, 对460 nm的光源响应度可以达到108 mA/W,该数值比原来的Se探测器高了800%。这项研究有利于拓展我们对范德瓦尔斯异质结的认识, 也为今后制备高性能的低维光电探测器提供了一种新的途径。
Abstract
To realize photodetection ranging from UV to visible region with high responsivity and low cost, a novel broadband photodetector based on mixed-dimensional van der Waals (vdW) heterojunction comprising a two dimensional (2D) n-type InSe nanosheet and a p-type Se microwire is proposed. Benefiting from the high crystal micrometer-sized Se microwire and two dimensional InSe nanosheet, the device exhibits a high responsivity ranging from UV to visible region with a sharp cutoff at 700 nm. It is worth pointing out that the responsivity of the device could reach up to 108 mA/W at 460 nm at -5 V. The responsivity is 800% larger than that of pristine Se device. These investigations will broaden our fundamental knowledge of vdW heterostructures, which would open additional opportunities for fabricating low dimensional photodetectors with high performance.
陈洪宇, 尚慧明, 戴明金, 王月飞, 李炳生, 胡平安. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019, 40(11): 1409. CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin, WANG Yue-fei, LI Bing-sheng, HU Ping-an. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019, 40(11): 1409.