报道了中心波长在674 nm的周期性电极窄条形单纵模半导体激光器。其制作工艺简单, 仅使用i线光刻技术和普通的刻蚀技术制作的周期性沟槽与周期性电极结构即保证了器件工作在增益耦合机制下, 进而实现单纵模激光输出。当注入电流为85 mA、测试温度18 ℃时, 激光器的输出功率为2.603 mW。 当注入电流为60 mA时, 在不同测试温度下, 器件均保持单纵模工作。当室温为16 ℃时, 测得器件的光谱线宽可达到2.42 pm, 边模抑制比为47 dB。 由于该器件制作成本低, 性能优良, 可广泛应用于实际生产中。

A narrow-strip single-longitudinal-mode semiconductor laser based on periodic anodes with a central wavelength of approximately 674 nm is demonstrated. The manufacturing process is simple, the periodic trenches and periodic electrode structures fabricated only using i-line lithography and conventional etching techniques, which ensures that the device operates under a gain coupling mechanism, thereby enabling the output of a single longitudinal mode laser. When the injection current is 85 mA and the test temperature is 18 ℃, the output power of the laser is 2.603 mW. When the injection current is 60 mA, the device maintains a single longitudinal mode operation at different test temperatures. When the room temperature is 16 ℃, the measured spectral linewidth of the device can reach 2.42 pm, and the side mode suppression ratio is 47 dB. Owing to the low-cost fabrication methods and good performances, our single-longitudinal-mode devices can be used for widespread practical applications.