铸造单晶硅太阳电池由于性价比高, 在晶硅太阳能市场占有越来越重要的地位。文章以B和Ga共掺杂的铸造单晶硅钝化发射和背面(PERC)电池为研究对象, 采用现有工业生产的电注入退火方法, 分别进行了260和180℃温度下的不同电注入条件退火处理和随后的光致衰减(LID)效应分析。分析表明: 经180℃的电注入退火处理, 电池效率的变化率为-0.64%, 经60kW·h的光照后, 电池效率比退火前降低了2.79%。而经过260℃的电注入退火处理后, 电池效率提高1.12%, 且经60kW·h的光照后, 电池效率比退火前仅下降1.96%。这些结果说明, 260℃的电注入退火条件更适用于铸造单晶硅电池的抗LID处理。

Due to their high performance and low price, cast monocrystalline silicon solar cells are becoming more and more important in the PV market. The casting monocrystalline silicon passivated emitter and rear cells (PERC) co-doped with B and Ga were taking as the research object, and treated by current injection annealing under 260 and 180℃. And the light induced degradation (LID) effect before and after annealing process was anlyzed. The results show that the efficiency of the cells annealled under 180℃ will reduce by 0.64%, while after a light exposure for 60kW·h, the efficiency is decreased by 2.79%. On the other hand, after the current injection annealing at 260℃, the efficiency of the solar cell is increased by 1.12%, and after a light exposure treatment for 60kW·h, it is only decreased by 1.96%. All the results prove that current injection annealing at 260℃ is a better condition for the anti-LID treatment.