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磁控溅射法制备LiTaO3薄膜及其结晶性能研究

Preparation and Crystallization Properties of LiTaO3 Thin Films by Magnetron Sputtering

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摘要

用射频磁控溅射法在Pt/Ti/SiO2/Si(100)基片上沉积了LiTaO3薄膜, 并在氧气气氛中不同温度下进行退火。采用SEM、XRD、XPS等表征方法分析了薄膜的结晶性能、各元素化学价态和元素原子百分比。结果表明, 经700℃退火处理1h得到的薄膜结晶性能最好, 在(104)晶向上具有强烈的择优取向性。薄膜退火温度的升高导致薄膜中Li空位缺陷和O空位缺陷减少。研究表明, 薄膜中O/Li的原子比对结晶性能有着非常明显的影响, 原子值越接近晶体化学计量比, 结晶性能越好。

Abstract

LiTaO3 thin films were deposited on Pt/Ti/SiO2/Si (100) substrates by radio frequency magnetron sputtering method. The crystallization behavior, chemical valence states and atomic percentage of elements were analyzed by SEM, XRD and XPS. The results show that the films annealed at 700℃ for 1hour have the best crystallinity and strong preferred orientation in (104) direction. The increase of annealing temperature causes the decrease of Li and O vacancies in the films. The results show that the atomic ratio of O/Li has a very significant effect on the crystallinity of the LiTaO3 films. This ratio value is closer to the stoichiometric ratio of lithium tantalate crystal, the crystallization performance is better.

Newport宣传-MKS新实验室计划
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中图分类号:TN384

DOI:10.16818/j.issn1001-5868.2019.06.012

所属栏目:材料、结构及工艺

基金项目:国家自然科学基金创新研究群体项目(61421002); 国家自然科学基金项目(61501092).

收稿日期:2019-05-07

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孙斌玮:电子科技大学 光电科学与工程学院, 成都 610054
杨 明:电子科技大学 光电科学与工程学院, 成都 610054
苟 君:电子科技大学 光电科学与工程学院, 成都 610054
王 军:电子科技大学 光电科学与工程学院, 成都 610054
蒋亚东:电子科技大学 光电科学与工程学院, 成都 610054

联系人作者:孙斌玮(sbw5509520@sina.com)

备注:孙斌玮(1989-), 男, 博士研究生, 主要从事钽酸锂薄膜材料制备的研究。

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引用该论文

SUN Binwei,YANG Ming,GOU Jun,WANG Jun,JIANG Yadong. Preparation and Crystallization Properties of LiTaO3 Thin Films by Magnetron Sputtering[J]. Semiconductor Optoelectronics, 2019, 40(6): 806-809

孙斌玮,杨 明,苟 君,王 军,蒋亚东. 磁控溅射法制备LiTaO3薄膜及其结晶性能研究[J]. 半导体光电, 2019, 40(6): 806-809

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