基于Comsol Multiphysics平台, 通过使用有限元仿真对三维集成电路的硅通孔(TSV)模型进行了热仿真分析。分别探究了TSV金属层填充材料及TSV的形状、结构、布局和插入密度对三维(3D)集成电路TSV热特性的影响。结果表明: TSV金属层填充材料的热导率越高, 其热特性就越好, 并且采用新型碳纳米材料进行填充比采用传统金属材料更能提高3D集成电路的热可靠性; 矩形形状的TSV比传统圆形形状的TSV更有利于3D集成电路散热; 矩形同轴以及矩形双环TSV相比其他结构TSV, 更能提高TSV的热特性; TSV布局越均匀, 其热特性越好; 随着TSV插入密度的增加, 其热特性越好, 当插入密度达6%时, 增加TSV的数目对TSV热特性的影响将大幅减小。

Based on Comsol Multiphysics platform, thermal simulation analysis was carried out on the through-silicon via (TSV) model of 3D integrated circuit through finite element simulation. The influences of TSV metal layer filling material, TSV shape, structure, layout and insertion density on its thermal characteristics of 3D integrated circuit were explored respectively. The results show that higher thermal conductivity of TSV metal layer filler material result in better thermal characteristics. Moreover, filling with new carbon nanomaterials can improve the thermal reliability of 3D integrated circuits much more than traditional metal materials. The TSV with rectangular shape is more conductive to heat dissipation of 3D integrated circuits than the TSV with traditional circular shape. Compared with other structures, rectangular coaxial TSV and rectangular double-ring TSV can improve the thermal characteristics. Both more uniform TSV layout and increasing TSV insertion density can bring better thermal characteristics. When the insertion density reaches 6%, increasing TSV number will exert less influence on the thermal characteristics.