MOS电阻阵目前在红外仿真领域有着广泛的应用和重要的作用。作为红外半实物仿真链路中的核心器件, 其成像效果直接关系到最终仿真结果的准确度和置信度。目前的红外仿真数字信号进入电阻阵后会产生一系列图像退化和耦合失真问题, 因此需要从MOS电阻阵的成像机理出发, 分析其成像原理及能量传递过程, 针对单个像元建立符合其自身物理特性的过程及辐射模型。通过输入信号与输出信号的函数关系来量化和验证模型的准确度和置信度。这个模型作为MOS电阻阵的基础模型对未来研究更大规模电阻阵的耦合特性、反向模型及非均匀性校正均有重要的理论基础和实际工程应用价值和意义。

MOS resistor arrays are widely used and play an important role in infrared simulation field. As the core device in the infrared hardware-in-the-loop simulation link, the imaging effect is directly related to the accuracy and confidence of the final simulation results. At present, a series of problems, such as image degradation and coupling distortion, will occur when the infrared simulation digital signal enters the MOS resistor array. Therefore, it is necessary to analyze the imaging principle and energy transfer process of the MOS resistor array based on its imaging mechanism, and to establish a process and radiation model for a single pixel which conforms to its own physical characteristics. The accuracy and confidence of the model were quantified and verified by the functional relationship between the input signal and the output signal. These achievements could provide an important theoretical basis for future research on coupling characteristics, reverse correction models and non-uniformity correction of larger scale MOS resistor arrays, while having significant value in practical engineering applications.