液晶与显示, 2020, 35 (2): 122, 网络出版: 2020-03-26
TFT-LCD四角发黑Mura的研究与改善
Research and improvement of dark corner Mura in TFT-LCD
摘要
研究了一种长期THO信赖性过程中产生的四角发黑Mura。由于该Mura在TFT膜面可见, 本文重点模拟分析了TFT侧在信赖性过程中电容的变化, 确定了不良是存储电容(Cst)变化引发的电学不良, 其机理为水汽不断进入第二绝缘层(PVX2), Cst持续增大, 进而造成了TFT-LCD像素充电电压和灰阶的降低。通过降低沉积压强和提高Si/N比, PVX2膜层致密性和阻水性加强, 模拟信赖性测试中电容的变化由19.6%降至0.5%, 成功解决了该不良, 避免了信赖性风险, 提升了产品品质。
Abstract
The dark corner Mura produced in the long-term process of THO reliability is studied. Because the Mura is visible on the TFT film surface, the capacitance change in TFT side during the process of reliability is mainly simulated and analyzed, and it is determined that it is a kind of electrical defect caused by the change of Cst. The mechanism is that water continuously enters into the PVX2 film and Cst increases at the same times, resulting in the reduction of the charging voltage and gray scale of TFT-LCD pixels. After improving the compactness of PVX2 film by decreasing pressure and increasing Si/N ratio in the deposition process, the change of capacitance decreases from 19.6% to 05% in the simulation reliability test because of the better capability of water resistance, which successfully solves the problem, avoids the risk in the reliability test and improves the product quality.
操彬彬, 刘幸一, 陈鹏, 彭俊林, 杨增乾, 安晖, 汪弋, 栗芳芳, 陆相晚, 刘增利, 李恒滨. TFT-LCD四角发黑Mura的研究与改善[J]. 液晶与显示, 2020, 35(2): 122. CAO Bin-bin, LIU Xing-yi, CHEN Peng, PENG Jun-lin, YANG Zeng-qian, AN Hui, WANG Yi, LI Fang-fang, LU Xiang-wan, LIU Zen-li, LI Heng-bin. Research and improvement of dark corner Mura in TFT-LCD[J]. Chinese Journal of Liquid Crystals and Displays, 2020, 35(2): 122.