为了提高GaSb热光伏电池的转换效率，在电池结构中引入p+-GaSb窗口层，研究了生长基底、衬底温度和反应物源温度对p+-GaSb薄膜性能的影响，并优化了电池结构中p+-GaSb窗口层的厚度和掺杂浓度。实验结果表明，生长基底和温度等制备参数影响着p+-GaSb薄膜的结构特性和电学特性，而且，较薄的高掺杂p+-GaSb层有利于提高电池性能。通过测试和仿真，热光伏电池的转换效率达到9.49%(AM1.5测试)和20.34%(AFORS-HET仿真)。

In order to improve the conversion efficiency of GaSb thermophotovoltaic cells, p+-GaSb window layer was introduced into the cell structure. The effects of bases, substrate temperature and reactant source temperature on the properties of p+-GaSb films were studied, the thickness and doping concentration of p+-GaSb window layer in the cells were optimized. The experimental results show that the structure and electrical properties of p+-GaSb films are affected by the bases and temperatures, and the performance of the cells can be improved significantly with thin and high doping p+-GaSb layers. Through the measurement and simulation, the conversion efficiencies of the thermophotovoltaic cells reaches 9.49% (AM1.5 measurement) and 20.34% (AFORS-HET simulation).