采用磁控溅射方法在单银Low-E玻璃基底上制备了ASV(Low-E膜系/SiO2/VO2)以及ASVS(Low-E膜系/SiO2/VO2/SiO2)复合膜系，得到可热致变色的近红外隔绝膜系。通过UV-NIR分光光度计、XPS、XRD、SEM，研究了VO2厚度以及SiO2增透层对膜系的透过、隔热性能的影响。结果表明，在20~90 ℃范围内，ASV膜系的红外平均透过率Tnir随温度升高降低，随着VO2厚度的增加，Tnir下降，选择系数Q先上升后下降。VO2厚度为50 nm时，90 ℃近红外隔绝性能增幅ΔTnir为18.56%，Q达到96.59%。相较ASV膜系，ASVS膜系的可见光透过率提升16.88%，90 ℃的Tnir不变。Q达到102.4%，性能优于ASV膜系。

ASV (Low-E film system/SiO2/VO2) and ASVS (Low-E film system/SiO2/VO2) composite film system were prepared on a single silver Low-E glass substrate by magnetron sputtering, and a thermochromic near-infrared isolation film system was obtained. Through UV-NIR spectrophotometer, XPS, XRD and SEM, the effects of VO2 thickness and SiO2 antireflection layer on the permeability and thermal insulation of the film system were studied. The results show that in the range of 20-90 ℃, the near infrared average transmittance Tnir of ASV film system decreases with the increase of temperature, with the increase of VO2 thickness, Tnir decreases, and the selection coefficient Q increases first and then decreases. When the thickness of VO2 is 50 nm, the increment of near-infrared insulation performance ΔTnir at 90 ℃ is 18.56%, and Q is 96.59%. Compared with ASV film system, ASVS film system has 16.88% higher visible light transmittance, while Tnir remains unchanged at 90 ℃, and Q is 102.4%. Its performance is better than ASV film system.