氮化铝(AlN)具有超宽禁带宽度(6.2 eV)、高热导率(340 W/(m·℃))、高击穿场强(11.7 MV/cm)、良好的紫外透过率、高化学和热稳定性等优异性能,是氮化镓基(GaN)高温、高频、高功率电子器件以及高Al组分深紫外光电器件的理想衬底材料。物理气相传输(PVT)法是制备大尺寸高质量AlN单晶最有前途的方法。本文介绍了AlN单晶的晶体结构、基本性质及PVT法生长AlN晶体的原理与生长习性。基于AlN单晶PVT生长策略,综述了自发形核工艺、同质外延工艺及异质外延工艺的研究历程,各生长策略的优缺点及其最新进展。最后对PVT法生长AlN单晶的发展趋势及其面临的挑战进行了简要展望。

Due to its ultra-wide bandgap (6.2 eV), high thermal conductivity (340 W/(m·℃)), high breakdown field (11.7 MV/cm), excellent ultraviolet (UV) transparency and high chemical and thermal stabilities, bulk aluminum nitride (AlN) substrate is an excellent candidate for GaN-based high-temperature, high-frequency, high-power electronic and deep-UV optoelectronic devices with high Al content. The Physical Vapor Transport method (PVT) is the most promising technique for the growth of large-size and high-quality bulk AlN single crystals. The crystal structure, basic properties, growth theory and natural growth habits of AlN crystals grown by the PVT method are introduced primarily. Based on the PVT growth strategy of AlN single crystal, the research history of spontaneous growth, homoepitaxy and heteroepitaxy, the advantages and disadvantages of each growth strategy and the latest progress are reviewed in great detail. The recent progress and future challenges of AlN crystal growth by the PVT method are addressed as well.