采用旋涂制备的纳米银(Silver nanoparticle, Ag NPs)作为阴极, 制备了全溶液加工的红、绿、蓝量子点发光二极管(red, green, blue-quantum dots light-emitting diodes, R-, G-,B-QLEDs)。并针对溶液加工Ag NPs阴极器件启亮电压(Turn-on voltage, Vt)较蒸镀Ag阴极器件偏高的问题, 采用了低真空与热退火组合工艺干燥Ag NPs阴极, 实现了可以与真空蒸镀金属阴极比拟的Vt, R-, G-,B-QLEDs的Vt分别为1.9, 2.6, 3.2 V。实验结果表明, 该阴极处理工艺可能为研制低Vt的全印刷显示发光器件提供新的工艺思路。

All-solution processed red, green, blue-quantum dot light-emitting diodes (R-, G-, B-QLEDs) were fabricated by using spin-coated silver nanoparticles (Ag NPs) as the cathode. In order to solve the higher turn-on voltage (Vt) compared to QLEDs with vacuum deposited Ag cathode, a combination of low-vacuum and thermal annealing drying process was used to dry the Ag NPs cathode. With this new process, the Vt of R-, G-, B-QLEDs was reduced to 1.9 V, 2.6 V, 3.2 V, respectively, which was comparable to the devices with vacuum deposited Ag cathode. The results show that the cathode treatment process may provide a new process idea for fabricating fully printing display light-emitting devices with low Vt.