本文旨在针对TOPCon(Tunnel Oxide Passivated Contact背面隧穿氧化钝化接触)晶硅电池制备过程中，背面钝化多晶硅层沉积引起的硅片正面边缘沉积多晶硅绕镀层的去除进行工艺研究，进一步解决了电池外观不良和该多晶硅层对电池正面光的吸收影响。文中分别尝试采用HF-HNO3混酸溶液和KOH碱溶液两种方式进行腐蚀处理，然后通过对处理后硅片正面的工艺控制点监控和电池EL检测等手段评估去除效果。其中HF 1wt%、HNO3 50wt%混合溶液时腐蚀4 min以上可去除该绕镀层，但是大于6 min后硅片正面的方块电阻提升、硼掺杂浓度等变化幅度很大。KOH质量分数0.1wt%、添加剂体积分数5vol%混合溶液60 ℃时，腐蚀2.5 min以上可去除该绕镀层且方块电阻等测试相对变化幅度较小。故前者对电池后期电极的制备工艺要求更高否则容易引起欧姆接触不良，后者则对电池电极的制备工艺控制窗口更大。所以认为在多晶硅绕镀层的去除方面KOH腐蚀更适合工业批量化生产工艺选择。

The purpose of this paper is to study the removal process of poly silicon surround coating on the front edge of wafer. And, this layer is formed when poly-si passivation layer of TOPCon (tunnel oxide activated contact) solar cell is deposited on the back. The research solved the problem of bad appearance and poor light absorption of solar cell. In this paper, HF-HNO3 solution and KOH solution were used to corrosion this layer, and then the removal effect was evaluated by monitoring the process control points and EL test after corrosion. When HF 1wt% and HNO3 50wt%, the surround coating can be removed after corrosion for more than 4 min, but the square resistance(R□)and boron doping concentration on the front of silicon wafer change greatly after more than 6 min. When KOH 0.1wt% and additive 5vol%， 60 ℃, the coating can be removed after corrosion for more than 2.5 min, and the change of R□.etc is not obvions. Therefore, the former has higher requirements for the preparation of electrode, otherwise it is easy to cause poor ohmic contact of the solar cell. And for the latter, electrode preparation process of solar cell is easier to control. So, it is the better selection to removal the polysilicon surround coating for industrial production by KOH etching.