介绍了硅纳米线在制备技术方面的最新进展，综述了硅纳米线两种不同的生长模式(“自上而下”和“自下而上”)，以及在两种生长模式下硅纳米线的制备方法，即化学气相沉积、分子束外延、激光烧蚀、氧化物辅助生长、溶液法、电子束光刻、纳米压印光刻和金属辅助化学刻蚀等，并对各种方法的优缺点进行了仔细叙述，总结了硅纳米线的两种典型生长方向(平面和垂直)的研究现状。最后阐述了近年来硅纳米线在电子器件、传感器件和太阳能电池的应用情况，并展望其发展趋势，为科研人员进一步开拓硅纳米线研究提供一定参考。

The recent progress in the preparation of silicon nanowires is introduced, the growth pattern of the two different (“top-down” and “bottom-up”) and the preparation methods of different growth mode are reviewed, such as chemical vapor deposition, molecular beam epitaxy, laser ablation, oxide auxiliary growth, the solution method, electron beam lithography, nano-imprinting lithography, and metal auxiliary chemical etching, etc, and the advantages and disadvantages of these preparation methods are discussed, The research status of two typical growth directions (plane and vertical) of silicon nanowires is summarized. In the end, the application of silicon nanowires in electronic devices, sensors, and solar cells is summarized, and the development trend has prospected.