本文采用以蒙特卡罗方法为基础的SRIM软件模拟He离子注入对Ge中缺陷行为的影响，为高质量GOI(绝缘体上Ge)材料的制备提供理论指导。本文主要模拟了He离子入射角度、能量以及注入剂量对Ge材料损伤程度和溅射产额等的影响。研究表明：入射角度较小时，拖尾效应不明显，有利于避免沟道效应，同时缺陷空位数(DPA)也处于较低水平；能量增大导致离子射程增大，溅射产额减小，离表面越近的Ge中DPA变少，可以实现低DPA GOI材料的制备；离子注入剂量增大导致损伤区域增大且集中，然而更多的He离子聚集在射程附近，能够很好地降低GOI材料的剥离温度。

In this study, SRIM software based on the Monte Carlo method is used to simulate the defect behavior in Ge during He ion implantation, which provides theoretical guidance for the preparation of high-quality GOI (Ge on insulator) materials. The effect of the implantation angle, energy, and dose of the He ion on the damage degree and sputtering yield in Ge material was investigated. The results show that, the training effect is not serious when the incident angle is low. The channel effect can be avoided and the DPA in Ge material can be decreased. With the increase of the energy, the project range increases and the sputtering yield decreases. Moreover, the DPA in the Ge near surface decreases with the increase of the energy, indicating the low DPA in the GOI(Germanium-on-Insulator, GOI) material. The increase of ion implantation dose leads to the increase of the damage area and the aggregation of the defects. Moreover, when the dose increases, more He ions aggregate near the project range. This may lead to the decrease of the lift-off temperature of GOI material.