近年来，HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注，但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软件模拟了ZnO(n)/ZnSe(i)/c-Si(p)异质结太阳电池结构吸收层掺杂浓度、缺陷密度和界面缺陷态密度等参数对该结构短路电流、开路电压、填充因子和光电转换效率的影响。优化后的结果显示，当吸收层掺杂浓度为1×1021 cm-3，ZnO层和c-Si层缺陷密度小于1017 cm-3时，ZnSe/c-Si界面缺陷密度小于1025 cm-3时，该结构太阳能电池光电转换效率可达24.29%。

Heterojunction with intrinsic thin-layer (HIT) solar cells have attracted a great deal of interest in the researchers recently due to its advantages of high energy conversion efficiency and low temperature production procedure, however the high cost of raw material, the harsh technical conditions and the defect state control have become the major problems which prevent its further development. The AFORS-HET software is employed to simulate the influence of the absorber layer doping concentration, the defect density and the interface defect density of state on the ZnO(n)/ZnSe(i)/c-Si(p) heterojunction solar cell’s performances (the short-circuit current, open-circuit voltage, fill factor and photoelectric conversion efficiency). The optimized result shows that when the doping concentration of the absorber layer is 1×1021 cm-3, the defect density of the ZnO layer and c-Si layer is less than 1017 cm-3, and the defect density of the ZnSe/c-Si interface is less than 1025 cm-3, the photoelectric conversion efficiency of the solar cell with this structure can reach 24.29%.