本文采用射频磁控溅射法，以高硼硅玻璃为靶材，在高硼硅玻璃基底上制备高硼硅玻璃薄膜。探讨磁控溅射法与熔融法制得的高硼硅玻璃的性能差异，研究磁控溅射功率对高硼硅玻璃薄膜质量的影响。通过X射线衍射仪(XRD)、傅里叶红外光谱仪(FT-IR)、X射线光电子能谱仪(XPS)、扫描电镜(SEM)、台阶仪、紫外可见（UV-Vis）分光光度计和纳米压痕仪器等对薄膜的物相结构、成分、沉积速率、透光率,以及纳米硬度和杨氏模量进行表征与分析。结果表明：本实验所制备的高硼硅玻璃薄膜为非晶态结构；当工作气压为0.6 Pa时，薄膜的沉积速率随溅射功率上升不断增加；对比不同溅射功率下的透光率，发现高硼硅玻璃薄膜对基体的透光性影响较小，当溅射功率为150 W，可见光透光率损失仅为2%；不同溅射功率下获得薄膜的纳米硬度和杨氏模量随溅射功率先增大后减小，在120 W时达到最大峰值，相较于原玻璃基底分别提升3%和3.5%。

Hig borosilicate glass films were prepared by RF magnetron sputtering on high borosilicate glass substrate using high borosilicate glass as sputtering target. The properties differences of high borosilicate glass prepared by magnetron sputtering and melting were discussed and the sputtering power on film quality was particularly addressed. The phase structure, composition, deposition rate, light transmittance, nano hardness and Young’s modulus of the films were characterized and analyzed by XRD, FT-IR, XPS, SEM, stylus profiler, UV-Vis spectrophotometer, and nano indentation instrument. The results show that the high borosilicate glass thin film prepared in this experiment shows amorphous structure. When the working pressure is 0.6 Pa, the deposition rate increases with the sputtering power. By comparing transmittance of the films prepared using different sputtering powers, it is found that high borosilicate glass films do not obviously influence the transmittance of substrate, with a loss of visible light transmittance being 2% at the sputtering power of 150 W. At different sputtering powers, the nano-hardness and Young’s modulus of the films first increase and then decrease with the sputtering powers, these properties reaches the peak values at 120 W, respectively increased by 3% and 3.5% with respect to the base glass substrate.