近年来，半导体的纳米材料凭借其奇特的介观物理特性，成为当前研究的热点，特别是纳米金属氧化物。氧化镓纳米材料具备优异的光电、气敏、耐压且低损耗等特性，为材料学、电子学和化学等多个研究领域带来了新的机遇。本文概述了氧化镓纳米结构的制备方法，并展望了其在光电探测方面的应用。

In recent years, the nanostructures of semiconductor materials has attracted wide attention because of its unique and novel size-related characteristics, especially nano-metal oxides. Gallium oxide nanomaterials have excellent photoelectric properties, gas sensing properties, pressure resistance and low loss properties, which bring new opportunities to many research fields such as materials science, electronics and chemistry. In this paper，the preparation methods of nano gallium oxide are reviewed, and its application in photoelectric detection is prospected.