设计了一种多频带可调谐的太赫兹超材料吸收器。在超材料吸收器的结构中，引入光敏半导体硅材料，设计特殊的顶层金属谐振器，分析开口长度、线宽、介质层厚度等参数尺寸对太赫兹超材料吸收器的吸收光谱特性影响。根据光照与光敏半导体硅电导率之间的关系，研究太赫兹超材料吸收器的频率调谐特性。仿真结果得到太赫兹波段的12个吸收频率调制，其中有10处吸收峰的吸收率超过90%近完美吸收，且有6处吸收率达到99%的完美吸收，而且吸收率调制深度和相对带宽分别达到85.9 %和85.5%，具有很强的可调谐特性。设计的光激励太赫兹超材料吸收器结构简单，具有多频带可调谐和完美吸收特性，扩大了吸收器的应用范围。

A multi-band tunable terahertz metamaterial absorber is proposed. In the structure of the metamaterial absorber， a photosensitive semiconductor silicon material was added and a special top metal resonator was designed. Analyzed the influence of the parameters such as the opening length， line width and dielectric layer thickness on the absorption spectral characteristics of the terahertz metamaterial absorber. According to the relationship between illumination and the conductivity of photosensitive semiconductor silicon， the frequency tuning characteristics of the terahertz metamaterial absorber was studied. The simulation results obtain 12 absorption frequency modulations in the terahertz band， the absorption rate of 10 absorption peaks of them exceeds 90% near perfect absorption， and 6 absorptions rate up to 99% perfect absorption. Moreover， the absorptivity modulation depth and relative bandwidth reaches 85.9% and 85.5% respectively， with strong tunable characteristics. The photo excited terahertz metamaterial absorber has a simple structure， multi-band tunable and perfect absorption characteristics， and expands the application range of the absorber.