红外与毫米波学报, 2019, 38 (6): 739, 网络出版: 2019-12-27
一种低功耗245 GHz次谐波接收机
次谐波接收机 锗硅BiCMOS工艺 低功耗 共基极低噪声放大器 二次次谐波无源反接并联二极管对混频器 中频放大器 245 GHz 245 GHz subharmonic receiver SiGe BiCMOS technology low power common base LNA 2nd passive APDP SHM intermediate frequency (IF) amplifier
摘要
介绍了一种应用于气体频谱分析传感器的低功耗245 GHz次谐波接收机,该接收机具有低功耗、高线性度和高集成度的特点.该接收机由四级共基极低噪声放大器、二次次谐波无源反接并联二极管对(APDP)混频器、120 GHz推推型压控振荡器-分频器链路、120 GHz功率放大器和中频放大器构成,采用了特征频率为300 GHz、最大振荡频率为500 GHz的锗硅BiCMOS工艺实现.该接收机芯片实现了10.6 dB的转换增益和13 GHz的带宽,噪声系数为20 dB, 输入1dB压缩点仿真结果为-9 dBm,接收机如果不包括120 GHz压控振荡器-功率放大器链路功耗为99.6 mW,接收机包括120 GHz压控振荡器-功率放大器链路功耗为312 mW.
Abstract
A low power 245 GHz subharmonic receiver for gas spectroscopy sensor application has been proposed. The receiver is characterized by low power, high linearity and high integration level. The receiver consists of a four stage common base (CB) LNA, a 2nd passive APDP (anti-parallel diode pair) SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, a 120 GHz PA (power amplifier) and an IF (intermediate frequency) amplifier. The receiver is fabricated in a SiGe:C BiCMOS technology with fT/fmax=300/500 GHz. The measured conversion gain is 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz , noise figure is 20 dB, and simulated input referred 1 dB compression point is -9 dBm. The receiver dissipates a power of 99.6 mW without 120 GHz VCO-PA chain, and a power of 312 mW with the 120 GHz VCO-PA chain.
毛燕飞, 鄂世举, , . 一种低功耗245 GHz次谐波接收机[J]. 红外与毫米波学报, 2019, 38(6): 739. Yan-Fei MAO, Shi-Ju E, Klaus SCHMALZ, SCHEYTTJ. Christoph.