Photonics Research, 2019, 7 (6): 06000B32, Published Online: May. 20, 2019   

GaN-based ultraviolet microdisk laser diode grown on Si Download: 540次

Author Affiliations
1 Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2 University of Science and Technology Beijing, Beijing 100083, China
3 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
4 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
5 e-mail: mxfeng2011@sinano.ac.cn
6 e-mail: qsun2011@sinano.ac.cn
Abstract
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3?nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded AlN/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12?μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248?mA.

Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng, Masao Ikeda, Hui Yang. GaN-based ultraviolet microdisk laser diode grown on Si[J]. Photonics Research, 2019, 7(6): 06000B32.

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