Photonics Research, 2019, 7 (9): 09000B66, Published Online: Aug. 14, 2019  

Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array Download: 935次

Liang Zhang 1,2Yanan Guo 1,2,3,4Jianchang Yan 1,2,3,4,6,*Qingqing Wu 1,2Yi Lu 1,2Zhuohui Wu 1,2Wen Gu 1,2Xuecheng Wei 1,2,3,4Junxi Wang 1,2,3,4,5,*Jinmin Li 1,2,3,4
Author Affiliations
1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
4 State Key Laboratory of Solid-State Lighting, Beijing 100083, China
5 e-mail: jxwang@semi.ac.cn
6 e-mail: yanjc@semi.ac.cn
Abstract
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present >2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improving light extraction efficiency. The three-dimensional finite-different time-domain simulation is performed to further analyze in detail the TE- and TM-polarized photons extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters.

Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, Jinmin Li. Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array[J]. Photonics Research, 2019, 7(9): 09000B66.

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