中国激光, 2020, 47 (7): 0701018, 网络出版: 2020-07-10
光场分布对GaN基绿光激光器的影响 下载: 1029次特邀研究论文
Influence of Optical Field Distribution on GaN-Based Green Laser Diodes
摘要
详细研究了n型AlGaN限制层与InGaN上波导对GaN基绿光激光器光场分布与电学特性的影响,结果表明:增加n型AlGaN限制层厚度或提高InGaN上波导中的铟组分可以明显抑制GaN基绿光激光器的光场泄漏,改善光场分布;相比In0.02Ga0.98N上波导,采用更高铟组分的In0.05Ga0.95N上波导可增加光场限制因子,改善绿光激光器的性能。综合调控n型限制层和上波导才能有效改善GaN基绿光激光器的光场分布,提高激光器的性能。
Abstract
This study thoroughly investigates the influences of n-type AlGaN cladding layers and upper waveguide layers (UWG) on the optical field distribution and electrical characteristics of GaN-based green laser diodes (LDs). It is found that the optical field leakage can be evidently suppressed by increasing the thickness of the AlGaN cladding layer or the indium content of the InGaN upper waveguide layer. Moreover, compared with LDs with In0.02Ga0.98N UWG, the LDs with a higher indium content of In0.05Ga0.95N UWG perform better because of the larger optical confinement factor. Therefore, coregulation of the n-type cladding layer and the UWG can improve the optical field distribution, enhancing the performance of GaN-based green LDs.
梁锋, 赵德刚, 江德生, 刘宗顺, 朱建军, 陈平, 杨静. 光场分布对GaN基绿光激光器的影响[J]. 中国激光, 2020, 47(7): 0701018. Liang Feng, Zhao Degang, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing. Influence of Optical Field Distribution on GaN-Based Green Laser Diodes[J]. Chinese Journal of Lasers, 2020, 47(7): 0701018.