Photonics Research, 2020, 8 (4): 04000610, Published Online: Apr. 1, 2020
Individually resolved luminescence from closely stacked GaN/AlN quantum wells Download: 877次
Abstract
Investigating closely stacked GaN/AlN multiple quantum wells (MQWs) by means of cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope, we have reached an ultimate spatial resolution of . The pseudomorphically grown MQWs with high interface quality emit in the deep ultraviolet spectral range. Demonstrating the capability of resolving the 10.8 nm separated, ultra-thin quantum wells, a cathodoluminescence profile was taken across individual ones. Applying a diffusion model of excitons generated by a Gaussian-broadened electron probe, the spatial resolution of cathodoluminescence down to the free exciton Bohr radius scale has been determined.
Bowen Sheng, Gordon Schmidt, Frank Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, Jürgen Bläsing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, André Strittmatter, Bo Shen, Jürgen Christen, Xinqiang Wang. Individually resolved luminescence from closely stacked GaN/AlN quantum wells[J]. Photonics Research, 2020, 8(4): 04000610.