红外与毫米波学报, 2020, 39 (6): 667, 网络出版: 2021-01-20
利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器
Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
量子点激光器 分子束外延 特征温度 中红外 quantum dot laser molecular beam epitaxy characteristics temperature mid-infrared
摘要
通过MBE外延系统生长了1.3 μm的GaAs基InAs量子点激光器.为了获得更好的器件性能，InAs量子点的最优生长温度被标定为520 ℃，并且在有源区中引入Be掺杂.制备了脊宽100 μm，腔长2 mm的激光器单管器件，在未镀膜的情况下，达到了峰值功率1.008 W的室温连续工作，阈值电流密度为110 A/cm-2，在80℃下仍然可以实现连续工作，在50 ℃以下范围内，特征温度达到405 K.
Abstract
GaAs-based 1.3 μm InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520 ℃， and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 μm and cavity length of 2 mm， the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave （CW） operation at room temperature， and the threshold current density is 110 A/cm2. The QD lasers can still operate at continuous waves （CW） up to 80 ℃， and the characteristic temperature below 50 ℃ is as high as 405 K.
袁野, 苏向斌, 杨成奥, 张一, 尚金铭, 谢圣文, 张宇, 倪海桥, 徐应强, 牛智川. 利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器[J]. 红外与毫米波学报, 2020, 39(6): 667. Ye YUAN, Xiang-Bin SU, Cheng-ao YANG, Yi ZHANG, Jin-Ming SHANG, Sheng-Wen XIE, Yu ZHANG, Hai-Qiao NI, Ying-Qiang XU, Zhi-Chuan NIU. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves, 2020, 39(6): 667.
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