红外与毫米波学报, 2020, 39 (3): 306, 网络出版: 2020-07-07
一种采用双耦合等效跨导增强技术的94 GHz CMOS LNA
双耦合等效跨导增强 低噪声放大器 毫米波 共栅管栅端短接 Dual-coupling gm-boosting technique Low noise amplifier (LNA) mm-Wave Common-gate-shorting technique
摘要
采用55 nm CMOS工艺,设计了一款应用于毫米波成像系统的94 GHz低噪声放大器(LNA)。提出一种双耦合等效跨导增强技术,在提高增益的同时,实现良好的宽带输入匹配。使用中和电容技术和共栅管栅端短接技术,进一步提高增益,并保证放大器的高频稳定性。芯片测试结果表明,LNA的小信号增益最大值达到14.2 dB,3 dB带宽为87.1~95 GHz,噪声系数为6.7 dB,输入1 dB压缩点为-13 dBm。
Abstract
A 94 GHz mm-Wave LNA targeted for imaging system is designed and fabricated in 55 nm CMOS process. The dual-coupling gm-boosting technique is proposed to achieve high gain and wide-band input matching. Meanwhile, in order to improve the gain and ensure the stability of the proposed LNA, the capacitance neutralization method and the common-gate-shorting technique are simultaneously introduced. The measurement results indicate that the LNA achieves a small signal gain of 14.2 dB, a BW-3dB of 87.1~95 GHz, a NF of 6.7dB as well as an input-referred 1 dB compression point of -13 dBm.
张凯娟, 石春琦, 张润曦. 一种采用双耦合等效跨导增强技术的94 GHz CMOS LNA[J]. 红外与毫米波学报, 2020, 39(3): 306. Kai-Juan ZHANG, Chun-Qi SHI, Run-Xi ZHANG.