太赫兹技术在安检成像等领域具有重要的应用前景,然而当前太赫兹技术应用面临高灵敏度太赫兹探测器缺乏的困难,因此开发检测灵敏度高、响应速度快、可室温工作、便于集成超大规模阵列的探测芯片具有重要科学意义和实际应用价值。太赫兹波段的微测热辐射计(microbolometer)阵列芯片和红外相机读出电路兼容,是最先实现太赫兹相机的芯片,成为研制太赫兹相机的主流。我们研制的Nb₅N₆ microbolometer阵列器件,由于可常温工作、工艺简单、检测灵敏度高、响应速度快、便于集成超大规模阵列,受到了国际科学界和工业界的关注。就Nb₅N₆ microbolometer太赫兹阵列探测芯片在设计制备过程中遇到的一些关键技术问题,如衬底干涉效应、高效耦合结构设计、低噪声读出电路设计、及焦平面阵列与读出电路的封装集成等,进行介绍和总结,为大规模太赫兹阵列探测芯片的设计与制备提供参考。

The development of large-scale terahertz (THz) array detection chips is of great significance to the promotion of related imaging and security applications. Because of the compatibility of THz microbolometer array technology with readout circuits used for infrared camera, it is the first chip to realize terahertz camera and is becoming the mainstream of THz camera. We have been devoted to the research of microbolometer array chips at room temperature. The Nb5N6 microbolometer array device has attracted the attention of international academia and industry due to its simple operation, high sensitivity, fast response and easy integration of ultra-large arrays. This paper reviews and summarizes some key technical problems encountered in the design and fabrication of THz array detection chips with Nb5N6 microbolometer, such as substrate interference effect, design of efficient coupling structure, design of low-noise readout circuits, and packaging and integration of readout circuits. It provides a reference for the design and fabrication of large-scale THz array detection chips.