Photonics Research, 2020, 8 (9): 09001409, Published Online: Jul. 27, 2020   

Structural color switching with a doped indium-gallium-zinc-oxide semiconductor Download: 792次

Author Affiliations
1 Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
2 Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
3 Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
4 National Institute of Nanomaterials Technology (NINT), Pohang 37673, South Korea
5 e-mail: ychung@postech.ac.kr
Abstract
Structural coloration techniques have improved display science due to their high durability in terms of resistance to bleaching and abrasion, and low energy consumption. Here, we propose and demonstrate an all-solid-state, large-area, lithography-free color filter that can switch structural color based on a doped semiconductor. Particularly, an indium-gallium-zinc-oxide (IGZO) thin film is used as a passive index-changing layer. The refractive index of the IGZO layer is tuned by controlling the charge carrier concentration; a hydrogen plasma treatment is used to control the conductivity of the IGZO layer. In this paper, we verify the color modulation using finite difference time domain simulations and experiments. The IGZO-based color filter technology proposed in this study will pave the way for charge-controlled tunable color filters displaying a wide gamut of colors on demand.

Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho. Structural color switching with a doped indium-gallium-zinc-oxide semiconductor[J]. Photonics Research, 2020, 8(9): 09001409.

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