Opto-Electronic Advances, 2019, 2 (12): 12190014, Published Online: Jan. 8, 2020  

Polariton lasing in InGaN quantum wells at room temperature

Author Affiliations
1 Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
2 Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
3 School of Physical Science and Technology, Guangxi University, Nanning 530004, China
Abstract
In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.

Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 12190014.

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