互补金属氧化物半导体(CMOS)图像传感器应用于空间时容易受到空间质子辐照影响。在地面对某国产商用CMOS图像传感器开展质子辐照试验，试验中通过离线和在线采集图像两种方法研究其累积辐射效应和单粒子效应。通过分析辐照后暗信号变化研究质子诱导累积辐射效应，并从总剂量和位移损伤两方面分析了暗信号分布规律和产生机理。在线采集图像表明：质子诱导CMOS图像传感器像素单元单粒子现象包括瞬态亮点、瞬态亮斑和瞬态亮线。结合质子和CMOS图像传感器相互作用物理过程解释上述不同形状单粒子瞬态现象产生机理。试验中没有观察到CMOS图像传感器外围电路出现质子诱导的单粒子闩锁和单粒子功能中断现象。

Complementary metal-oxide-semiconductor (CMOS) image sensors can easily be susceptible to proton irradiation in space applications. A proton irradiation experiment of a domestic commercial CIS was conducted on the ground, and the cumulative radiation effect and single event effect were studied by using offline and online image acquisition methods. The proton-induced cumulative radiation effects were studied by analyzing the dark signal degradation after irradiation, and histogram and generation mechanism of dark signals were analyzed from the aspects of total dose and displacement damage. Online testing results show that proton-induced single event transients in active pixel array include transient bright spot, transient bright cluster, and transient bright line. The interaction mechanism of proton and CIS was analyzed to discuss the different single event transient phenomena. No single event latch-up and single event function interruption in the peripheral circuits of the CIS was observed in the experiments.