Monolayer transition metal dichalcogenides (TMDs) are ideal materials for atomically thin, flexible optoelectronic and catalytic devices. However, their optoelectrical performance such as quantum yield and carrier mobility often shows below theoretical expectations due to the existence of defects. For monolayer TMD-based devices, finding a low-cost, time-efficient, and nondestructive technique to visualize the change of defect distribution in the space domain and the defect-induced change of the carrier’s lifetime is vital for optimizing their optoelectronic properties. Here, we propose a microscopic pump-probe technique to map the defect distribution of monolayer TMDs. It is found that there is a linear relationship between transient differential reflection intensity and defect density, suggesting that this technique not only realizes the visualization of the defect distribution but also achieves the quantitative estimation of defect density. Moreover, the carrier lifetime at each point can also be obtained by the technique. The technique used here provides a new route to characterize the defect of monolayer TMDs on the micro-zone, which will hopefully guide the fabrication of high-quality two-dimensional (2D) materials and the promotion of optoelectrical performance.