Date: 04 Nov 2014
Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers
Abstract
In this paper, ATLAS 2D device simulator of SILVACO was used for device simulation of inverted-staggered thin film transistor using amorphous indium gallium zinc oxide as active layer (a-IGZO-TFT) with double active layers, based on the density of states (DOS) model of amorphous material. The change of device performance induced by the thickness variation of each active layer was studied, and the interface between double active layers was analyzed. The best performance was found when the interface was near the edge of the channel, by optimizing the thickness of each active layers, the high performance device of threshold voltage (V th) = − 0.89 V, sub-threshold swing (SS)= 0.27, on/off current ratio (I ON/I OFF) = 6.98 × 1014 was obtained.
Xiaoyue Li, student, Huazhong University of Science and Technology, He studied in Huazhong University of Science and Technology, and received the B.S. degree in electronic science and technology, then studied in Huazhong University of Science and Technology for the M.Eng. degree in microelectronic and solid state electronic. His research interests focus on amorphous oxide semiconductor thin film transistors.
Sheng YIN, associate professor, Huazhong University of Science and Technology. He studied in Huazhong University of Science and Technology, and received the B.S. degree in semiconductor physics and devices, the M.Eng. degree in electronic science and technology and the Ph.D. degree in microelectronics and solid state electronics. His research interests focus on flat panel displays including a-Si thin film transistors, LTPS thin film transistors, amorphous oxide semiconductor thin film transistors, AM-LCDs and AM-OLEDs.
Dong Xu, student, Huazhong University of Science and Technology. He studied in Huazhong University of Science and Technology, and received the B.S. degree in electronic science and technology, then studied in Huazhong University of Science and Technology for the M.Eng. degree in microelectronic and solid state electronic. His research interests focus on amorphous oxide semiconductor thin film transistors.