中国激光, 2003, 30 (2): 109, 网络出版: 2006-06-27
非均匀阱宽多量子阱155 μm高功率 超辐射光源
Wide-spectrum High-power 1.55 μm Superluminescent Light Source with Non-uniform Well-thickness Multi-quantum Wells
量子光学 超辐射发光管 非均匀阱宽多量子阱 半导体光放大器 单片集成 光谱分割 多波长光源 quantum optics superluminescent diode non uniform well thickness multi quantum wells semiconductor optical amplifier monolithic integration spectrum slicing multiwavelength light source
摘要
采用非均匀阱宽多量子阱材料拓宽超辐射器件的输出光谱，并利用前期关于倾斜脊形集成超辐射光源的研究成果，制得了新型的1.55 μm高功率宽光谱InGaAsP/InP集成超辐射光源。发现该器件较均匀阱宽多量子阱器件的输出光谱有很大变化，光谱半宽由原来的20～30 nm，增加到45～60 nm左右。该器件同样具有较好的抑制激射能力，在可测试范围内，在没有蒸镀腔面抗反射膜的情况下未见激射模式的出现。在准连续工作条件下，器件最大峰值功率已达到150 mW以上。
Abstract
In this paper, non uniform well thickness multi quantum wells (NWT MQWs) materials were adopted to widen the output spectrum of superluminescent device. A novel type of 1 55 μm high power wide spectrum InGaAsP/InP integrated superluminescent light source was fabricated based on the tilted ridge waveguide integrated superluminescent light source. The spectral halfwidth is increased from 20～30 nm with the uniform well thickness devices to 45～60 nm. The quasi CW superluminescent power of the device is over 150 mW.
刘杨, 宋俊峰, 曾毓萍, 吴宾, 张源涛, 许呈栋, 杜国同. 非均匀阱宽多量子阱155 μm高功率 超辐射光源[J]. 中国激光, 2003, 30(2): 109. 刘杨, 宋俊峰, 曾毓萍, 吴宾, 张源涛, 许呈栋, 杜国同. Wide-spectrum High-power 1.55 μm Superluminescent Light Source with Non-uniform Well-thickness Multi-quantum Wells[J]. Chinese Journal of Lasers, 2003, 30(2): 109.
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