光子学报, 2006, 35 (4): 0549, 网络出版: 2010-06-03
1．55μm低温生长GaAs谐振腔增强型探测器
1.55 μm Low-temperature-grown GaAs Resonant Cavity Enhanced Photodetector
摘要
利用低温(200℃)生长的GaAs材料作为吸收层制备了GaAs基1．55μm谐振腔增强型(RCE)光电探测器，对其光电特性进行了分析、研究．无光照0偏压下探测器暗电流为8．0×10－12A；光电流谱峰值波长1563nm；响应谱线半宽4nm，具有良好的波长选择性．
Abstract
1.55 μm resonant cavity enhanced photodetector was fabricated using low-temperature grown GaAs as the absorption layer. Its electrical and optical characteristics were investigated. Under 0 V bias without incident light the dark current was 8 X 10-11 A,the peak wavelength of the photocurrent was 1563nm with fullwidth at half maximum(FWHM) 4 nm.
韩勤, 彭红玲, 杜云, 倪海桥, 赵欢, 牛智川, 吴荣汉. 1．55μm低温生长GaAs谐振腔增强型探测器[J]. 光子学报, 2006, 35(4): 0549. Han Qin, Peng Hongling, Du Yun, Ni Haiqiao, Zhao Huan, Niu Zhichuan, Wu Ronghan. 1.55 μm Low-temperature-grown GaAs Resonant Cavity Enhanced Photodetector[J]. ACTA PHOTONICA SINICA, 2006, 35(4): 0549.
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