对采用单层ZnS和双层CdTe/ZnS两种钝化层结构的长波碲镉汞光伏器件进行了实时γ辐照效应研究.通过辐照过程中实时测试器件的电流－电压特性, 发现随着辐照剂量的增加, 两种器件表现出不同的辐照效应.结合光伏器件的电流机制分析, 对器件的电阻－电压曲线进行数值拟合, 发现器件的主要电流机制在偏压较大时为间接隧道电流, 在偏压较小及零偏压附近时为产生－复合电流.对辐照前后器件的电阻－电压曲线进行对比分析, 认为CdTe/ZnS双层钝化结构有助于降低辐照位移效应的影响, 使得器件间接隧道电流随辐照剂量无明显的增加；同时发现辐照电离效应的影响与器件材料的初始性能参数密切相关, 拟合得到ZnS单层钝化结构的器件具有较高的少子产生－复合寿命, 受电离效应的影响较大, 导致其产生－复合电流随着辐照剂量增加持续增大.

The γ irradiation effects of long-wavelength HgCdTe photovoltaic detectors with different passivate structures(one structure was a single layer of ZnS and the other was double layers of CdTe/ZnS) were studied. A real-time measurement of current-voltage (I-V) characteristic was performed during the irradiation process. It is found that the detectors exhibit different irradiation effects as the irradiation dosages increase. Numerical fitting of the resistance-voltage (R-V) curves of detectors was made according to the current mechanism of photovoltaic detectors. It is found that the current is mainly trap-assisted-tunneling current(TAT) at larger reverse bias voltages. And it is generation-recombination current (G-R) at smaller and zero reverse bias voltages. After the analysis of R-V curves of detectors before and after irradiation, it is discovered that the double layers of CdTe/ZnS help to reduce the irradiation displacement effect and bring no obvious increase of indirect trap-assisted-tunneling current as the increase of irradiation dosage. It is also found that irradiation ionization effects are closely related to the initial material parameters of the detectors. Besides, it is also found that the detector with a single layer of ZnS has a higher generation-recombination lifetime of minority carriers by fitting method, and its generation-recombination current increases persistently as the increase of irradiation dosage.