首页 > 论文 > 发光学报 > 31卷 > 5期(pp:767-772)

Si衬底上InP纳米线的晶体结构和光学性质

The Crystal Structure and Optical Properties of InP Nanowires Grown on Si Substrate

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

采用金属有机化学气相沉积技术, 利用自催化法, 在Si(100)、(111)衬底上成功生长了InP纳米线。利用扫描电镜观察样品表面, 在Si(100)、(111)衬底上生长的纳米线形貌相似, 纳米线面密度不同。利用X射线衍射和透射电镜研究纳米线的生长取向和晶体结构, 结果显示纳米线具有闪锌矿结构, 生长方向〈111〉, 并且具有层状孪晶结构。与InP体材料相比, 纳米线的光致发光峰位蓝移, 半峰全宽增大, 拉曼散射TO和LO峰向低波数频移, 频移随激发光功率减弱而减小。

Abstract

Self-catalyzed InP nanowires were grown on Si (100) and Si (111) substrates by metal-organic chemical vapor deposition. Morphology, crystal structure, and optical properties of the nanowires were investigated. Using scanning electron microscope (SEM), we found that the morphology of the InP nanowires grown on Si (100) was similar with that of the InP nanowires grown on Si (111). The only difference between them was the density of the nanowires. Most nanowires are long and straight; the angles between the nanowires and the Si substrate are diverse. This was attributed to the native oxide on Si substrates. The X-ray diffraction results showed that two peaks of InP (111) and InP (220) was able to be seen in the spectra. Two more peaks of InP (200) and InP (311) were observed if we continue to supply PH3 for 15 min after the nanowires growth for 7 min. The InP (220), InP (311), and InP (200) originated from InP crystal on the tip of the nanowires. Only the InP (111) originated from the InP nanowires. The transmission electron microscope (TEM) and transmission electron diffraction (TED) results showed that the nanowires exhibit zinc-blende (ZB) crystal structure; the main growth direction of the nanowires was 〈111〉; the nanowire has twin stacking faults. Temperature-dependent photoluminescence (PL) spectra of Fe doped InP substrate and InP nanowires grown on Si (100) were measured in the rages of 80 to 300 K. The PL peak at 1.425 eV for 80 K,for InP nanowires, shifted to 1.379 eV at 300 K, while the PL peak energy of InP substrate was 1.413 eV and 1.349 eV, respectively. The reasons for the blue-shift of the nanowires could be the existence of twin stacking faults. Due to laser-induced heating, the TO and LO phonon peaks of the nanowires revealed downshift and asymme-tric broadening compared with those of bulk InP at room temperature.

广告组6 - 调制器
补充资料

中图分类号:O472.3

基金项目:国家自然科学基金(50972141, 50632060)资助项目

收稿日期:2010-01-20

修改稿日期:2010-06-05

网络出版日期:0001-01-01

作者单位    点击查看

于淑珍:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033中国科学院 研究生院, 北京 100039
缪国庆:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
金亿鑫:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
张立功:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
宋航:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
蒋红:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
黎大兵:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
李志明:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
孙晓娟:中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033

联系人作者:于淑珍(emileysz@163.com)

备注:于淑珍(1982-), 女, 山东济宁人, 主要从事半导体光电子材料生长与结构的研究。

【1】Gudiksen M S, Lauhon L J, Wang J, et al. Growth of nanowire superlattice structures for nanoscale photonics and electro-nics [J]. Nature, 2002, 415(6872):617-620.

【2】Dayeh S A, Aplin D P R, Zhou X T, et al. High electron mobility InAs nanowire field-effect transistors [J]. Small, 2007, 3(2):326-332.

【3】Parkinson P, Lloyd-Hughes J, Gao Q, et al. Transient terahertz conductivity of GaAs nanowires [J]. Nano Lett., 2007, 7(7):2162-2165.

【4】Logeeswaran V J, Sarkar A, Islam M S, et al. A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface [J]. Appl. Phys. A: Mater. Sci. Process, 2008, 91(1):1-5.

【5】Kasai S, Hasegawa H. GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture [J]. Physica E, 2002, 13(2-4):925-929.

【6】Thelander C, Martensson T, Bjork M T, et al. Single-electron transistors in heterostructure nanowires [J]. Appl. Phys. Lett., 2003, 83(10):2052-2054.

【7】Bryllert T, Wernersson L E, Froberg L E, et al. Vertical high-mobility wrap-gated InAs nanowire transistor [J]. IEEE Electron Device Lett., 2006, 27(5):323-325.

【8】Roest A L, Verheijen M A, Wunnicke O, et al. Position-controlled epitaxial Ⅲ-Ⅴ nanowires on silicon [J]. Nanotech-nology, 2006, 17(11):S271-S275.

【9】Zhao Z, Yadavalli K, Hao Z, et al. Direct integration of Ⅲ-Ⅴ compound semiconductor nanostructures on silicon by selective epitaxy [J]. Nanotechnology, 2009, 20(3):035304-1-7.

【10】Tateno K, Hibino H, Gotoh H, et al. Vertical GaP nanowires arranged at atomic steps on Si(111) substrates [J]. Appl. Phys. Lett., 2006, 89(3):033114-1-3.

【11】Bakkers E P A M, Verheijen M A. Synthesis of InP nanotubes [J]. J. Am. Chem. Soc., 2003, 125(12):3440-3343.

【12】Poole P J, Lefebvre J, Fraser J. Spatially controlled, nanoparticle-free growth of InP nanowires [J]. Appl. Phys. Lett., 2003, 83(10):2055-2057.

【13】Cornet D M, Mazzetti V G M, LaPierre R R. Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy [J]. Appl. Phys. Lett., 2007, 90(1):013116-1-3.

【14】Watanabe Y, Hibino H, Bhunia S, et al. Site-controlled InP nanowires grown on patterned Si substrates [J]. Physica E, 2004, 24(1-2):133-137.

【15】Ihn S G, Song J I, Kim T W, et al. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates [J]. Nano Lett., 2007, 7(1):39-44.

【16】Mrtensson T, Patrik C, Svensson T, et al. Epitaxial Ⅲ-Ⅴ nanowires on silicon [J]. Nano Lett., 2004, 4(10): 1987-1990.

【17】Tomioka K, Motohisa J, Hara S, et al. Control of InAs nanowire growth directions on Si [J]. Nano Lett., 2008, 8(10): 3475-3480.

【18】Ihn S G, Song J I, Kim Y H, et al. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy [J]. Appl. Phys. Lett., 2006, 89(5): 053106-1-3.

【19】Bao X Y, Soci C, Susac D, et al. Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal organic chemical vapor deposition [J]. Nano Lett., 2008, 8(11):3755-3760.

【20】Detz H, Klang P, Andrews A M, et al. Growth of one-dimensional Ⅲ-Ⅴ structures on Si nanowires and pre-treated planar Si surfaces [J]. J. Cryst. Growth, 2009, 311(7):1859-1862.

【21】Allen J E, Rhemesath E, Perea D E, et al. High-resolution detection of Au catalyst atoms in Si nanowires [J]. Nat. Nanotechnology, 2008, 3(3):168-173.

【22】Oh S H, Benthem K V, Molina S I, et al. Point defect configurations of supersaturated Au atoms inside Si nanowires [J]. Nano Lett., 2008, 8(4):1016-1019.

【23】Novotny C J, Yu P K L. Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 2005, 87(20):203111-1-3.

【24】Bhunia S, Kawamura T, Fujikawa S, et al. Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy [J]. Thin Solid Films, 2004, 464-465(1):244-247.

【25】Xu X, Wei W, Qiu X, et al. Synthesis of InAs nanowires via a low-temperature solvothermal route [J]. Nanotechnology, 2006, 17(14):3416-3420.

【26】Gudiksen M S, Wang J, Lieber C M. Synthetic control of the diameter and length of single crystal semiconductor nanowires [J]. J. Phys. Chem. B, 2001, 105(19):4062-40644.

【27】Hiruma K, Yazawa M, Katsuyama T, et al. Growth and optical properties of nanometer-scale GaAs and InAs whiskers [J]. J. Appl. Phys., 1995, 77(2):447-462.

【28】Mattila M, Hakkarainen T, Jiang H, et al. Effect of substrate orientation on the catalyst-free growth of InP nanowires [J]. Nanotechnology, 2007, 18(15):155301-155304.

【29】Wang J, Gudiksen M S, Duan X, et al. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires [J]. Science, 2001, 293(5534):1455-1457.

【30】Woo R L, Xiao R, Kobayashi Y, et al. Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon(111) [J]. Nano Lett., 2008, 8(12):4664-4669.

【31】Yu S, Miao G, Jin Y, et al. Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates [J]. Physica E, 2010, 42(5):1540-1543.

引用该论文

YU Shu-zhen,MIAO Guo-qing,JIN Yi-xin,ZHANG Li-gong,SONG Hang,JIANG Hong,LI Da-bing,LI Zhi-ming,SUN Xiao-juan. The Crystal Structure and Optical Properties of InP Nanowires Grown on Si Substrate[J]. Chinese Journal of Luminescence, 2010, 31(5): 767-772

于淑珍,缪国庆,金亿鑫,张立功,宋航,蒋红,黎大兵,李志明,孙晓娟. Si衬底上InP纳米线的晶体结构和光学性质[J]. 发光学报, 2010, 31(5): 767-772

被引情况

【1】张登巍,缪国庆. MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线. 发光学报, 2012, 33(3): 294-298

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF