红外与毫米波学报, 2009, 28 (3): 165, 网络出版: 2010-12-13
GaAs基短周期InAs/GaSb超晶格红外探测器研究
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
超晶格 InAs/GaSb红外探测器 分子束外延 光谱响应 superlattice InAs/GaSb infrared detector molecular-beam epitaxy(MBE) spectral response
摘要
采用分子束外延(MBE)方法，在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML) 和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2 和57.3 .室温红外透射光 谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触，制备了短波和中波 的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试，77K下，50%截止波长分别为2.1μm和 5.0μm，黑体探测率D * bb 均超过2×10 8 cmHz 1/2 /W.室温下短波探测器D * bb 超过10 8 cmHz 1/2 /W.
Abstract
Two type II superlattices (SLs): InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2 and 57.3 ， respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1μm and 5μm for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1μm and 5.0 μm respectively and D* bb is above 2×108 cmHz 1/2 /W for two kinds of photoconductors at 77K. D * bb is above 10 8 cmHz 1/2 /W for SWIR photoconductor at room temperature.
郭杰, 彭震宇, 鲁正雄, 孙维国, 郝瑞亭, 周志强, 许应强, 牛智川. GaAs基短周期InAs/GaSb超晶格红外探测器研究[J]. 红外与毫米波学报, 2009, 28(3): 165. GUO Jie, PENG Zhen-Yu, LU Zheng-Xiong, SUN Wei-Guo, HAO Rui-Ting, ZHOU Zhi-Qiang, XU Ying-Qiang, NIU Zhi-Chuan. SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES[J]. Journal of Infrared and Millimeter Waves, 2009, 28(3): 165.
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