为了确定光谱仪的入射多狭缝结构设计的可靠依据, 研究了4种阿达玛S型狭缝阵列发生衍射后的光强分布。 采用MEMS加工技术制作出最小狭缝单元为6 μｍ×6 μｍ的一体式微硅片阿达玛狭缝阵列, 对3种S7型狭缝和一种S15型狭缝进行比较。 首先利用阿达玛矩阵构造狭缝阵列的孔径函数, 得到了衍射后的光强分布函数； 然后运用Matlab软件对光强分布函数仿真, 获得了各种狭缝衍射后的光强分布图及光通量对比。 搭建了试验装置进行验证, 试验表明实际衍射光强分布及光通量间的比值都与仿真结果相符。 最后分析了狭缝结构参数对光强分布的影响, 总结了S型狭缝阵列衍射规律。 所提出的衍射光强分布方法, 为光谱仪中入射狭缝的选择与设计提供了理论依据, 为实际应用提供了有价值的参考。

In order to realize high throughput of Hadamard spectrometer, the performance of four Hadamard S slits are compared. Multi-micro-silicon slits were produced by MEMS technique. Based on diffraction theory, the formula with Hadamard S matrix is presented. The phenomenon of diffraction is analyzed by using the software of Matlab. The comparison was made between the Matlab simulating picture and the actual diffract picture of S slits on throughput. Experiment results indicate the precisions of the system. The influence of the factors such as spot distance, slit dimension and the matrix array on the throughput was analyzed, then the diffracting way of S slit was offered. The results of emulation are consistent with test, and proved that the design method on the slit in the paper is right. The way of analysis can provide some theoretic and application foundations for slit design.