应用光学, 2010, 31 (6): 1018, 网络出版: 2011-01-26   

强激光辐照下光电探测器响应性能的研究

Responsivity of photoelectric detector irradiated by intense laser
作者单位
长春理工大学理学院, 吉林 长春 130022
摘要
响应度R是反映探测器性能的一项重要指标,当探测器被强激光损伤后,光电探测器的响应度将发生改变。设计了一套实时测量探测器响应度的装置,用能量逐渐增加的Nd∶YAG激光辐照PIN光电探测器,获得了探测器响应度与入射强激光功率密度的变化关系。从实验数据可知,探测器被功率密度低于7.6×105W/cm2的激光辐照后不会发生损伤,探测器对532nm参考光的响应度不变;当激光的功率密度超过1.27×106W/cm2时,激光辐照后,探测器对532nm参考光的响应度开始下降,当探测器被功率密度为6.01×106W/cm2的激光辐照后,响应度迅速下降,PN结遭到破坏是探测器响应度下降的根本原因,扫描电镜的结果与我们的分析相一致。
Abstract
Responsivity is an important factor for reflecting the performance of photoelectric detector and could be altered if the detector is laser-induced damaged. A system for monitoring real-time responsivity of the detector was developed. A PIN detector was irradiated by Nd∶YAG laser with energy increasing gradually, the relationship between the responsivity of detector and the power density of incident laser was obtained. The detector remained its performance when irradiated by laser with the power density of Nd: YAG laser less than 7.6×105W/cm2, the responsivity of the detector was constant for 532nm reference light. When the power density of laser was more than 1.27×106W/cm2, with increasing incident laser power density, the responsivity of the detector was reduced slowly. When the power density of laser was more than 1.27×106W/cm2, the responsivity of the detector was reduced sharply after being irradiated. The reason for the fall of responsivity was analyzed. The conclusion was confirmed by scanning electron microscope photographs (SEM).

徐立君, 蔡红星, 李昌立, 毕娟, 金光勇, 张喜和. 强激光辐照下光电探测器响应性能的研究[J]. 应用光学, 2010, 31(6): 1018. XU Li-jun, CAI Hong-xing, LI Chang-li, BI Juan, JI Guang-yong, ZHANG Xi-he. Responsivity of photoelectric detector irradiated by intense laser[J]. Journal of Applied Optics, 2010, 31(6): 1018.

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