研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀。采用Cl2/Ar/H2 混合刻蚀气体，分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系，及镍、二氧化硅和二者结合型掩膜版的适用范围。获得有效的刻蚀速率为450~1 200 nm/min，InP对金属镍的选择性刻蚀比值为175~190。掩膜版的选择与制备方法适用于基于ICP系统的任何半导体材料的干法刻蚀工艺。

Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied, Cl2/Ar/H2 gas mixture was adopted, and the etching depth could reach 10 μm with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate, and the applicable regions of Ni, SiO2, and the combination of Ni and SiO2 were studied, respectively. The regions of the effective etching rate and selectivity against Ni are 450~1 200 nm/min and 175~190，respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.