半导体光电, 2012, 33 (6): 826, 网络出版: 2012-12-31
铝插入层对硅基AlN外延特性的影响
Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate
摘要
采用等离子体辅助分子束外延(PA-MBE)研究了Al金属插入层对Si(111)衬底上AlN薄膜材料生长的影响。结果证明, Al插入层可改善AlN外延层的晶体质量, 而且引入Al预扩散机制可消除外延表面的孔隙。同时, 采用AlN插入层预扩散有利于获得Al极性的AlN, 否则倾向于获得N极性的AlN。
Abstract
The influence of Al interlayer on the growth of AlN on Si(111) substrate was studied by using PA-MBE. It is found that the AlN crystalline quality is improved by introducing the Al interlayer, and the holes on epitaxial surface can be eliminated by adopting a pre-diffusing process. Futhermore, the AlN grown with pre-diffusing Al interlayer proves to be Al-polar, otherwise presenting N-polar characteristics.
胡懿彬, 郝智彪, 胡健楠, 钮浪, 汪莱, 罗毅. 铝插入层对硅基AlN外延特性的影响[J]. 半导体光电, 2012, 33(6): 826. HU Yibin, HAO Zhibiao, HU Jiannan, NIU Lang, WANG Lai, LUO Yi. Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate[J]. Semiconductor Optoelectronics, 2012, 33(6): 826.
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